PART |
Description |
Maker |
K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C |
64Mb(8Mx8) concurrent RDRAM From old datasheet system (MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM 18Mb(2Mx9) concurrent RDRAM
|
OKI[OKI electronic componets] OKI electronic components
|
408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4R578816869A |
Direct RDRAM?Data Sheet
|
Samsung Electronic
|
MSM5716C50 |
(MSM5716C50 / MSM5718C50 / MSM5764802) 16M / 18M / 64M Concurrent RDRAM
|
OKI
|
MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM) 512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|
SAK-C505CA-4RC SAK-C505CA-LC C505CA-4RC SAA-C505CA |
8-Bit Microcontrollers - High temperature 8-Bit CMOS microcontroller (T=150°C ) with mask-programmable ROM, bare die, with CAN, (20 MHz) 8-bit Single-Chip Microcontroller (Bare Die Delivery)
|
INFINEON[Infineon Technologies AG]
|
HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
HTCICC6402FUG HTCICC6403FUG |
HITAG RO64 Transponder IC HTCICC64; HITAG RO64 transponder IC HTCICC6402FUG/AM<Uncased die|<<<1<Always Pb-free,;HTCICC6403FUG/AM<Uncased die|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
SIDC03D30SIC2SAWN SIDC03D30SIC2UNSAWN |
Diodes - HV Chips - 300V, 10A die sawn Diodes - HV Chips - 300V, 10A die unsawn
|
Infineon
|